Principal Design Engineer

As a Principal Design Engineer in the NVE Design Engineering Core group at Micron Technology, Inc., you will contribute to the development of memory products that are best-in-class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products!

What’s Encouraged Daily:

• Serve as a technical authority in the analog/core functional team for NAND projects, participating in pathfinding activities and solving sophisticated technical problems. 

• Collaborate on architecting NAND Xpath, Ypath, algorithms, waveforms, drive alignment of design solutions, methodologies, DTCO and circuits, including detailed competitive analysis (CA) across a distributed matrix organization, working closely with other functional teams to evaluate, analyze, and improve NAND power consumptions, across geographies and time zones.  

• Collaborate on designing, simulating, optimizing, and floor planning NAND circuits, evaluating design feasibility and analyze circuit functionalities. Perform die size cost and benefits analysis of new array circuits and algorithms prior to implementation. 

• Implementing analog and mixed signal circuit design to meet specifications, validating design performance and functionalities by running block and chip level simulations using standard industry simulators and mentor other engineers for the same. 

• Develop and productize agentic enablement for circuit design, including AI/LLM-assisted flows that support:  1. Environment setup and self-healing configuration 2. Guided simulation and debug,  3. Intelligent corner planning and coverage closure, 4. Automated schematic/layout checks and review assistance, 5. Documentation synthesis and knowledge retrieval from internal sources. 6. Block/subsystem/full-chip verification (analog/mixed-signal), including reproducible run recipes, golden reference management, and regression gating criteria. 

• Review existing and generate new user documentation. 

• Working with and supporting the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products to optimize all manufacturing functions and assure the best cost, quality, reliability, time-to-market, and customer satisfaction. 

Minimum Qualifications: 

• MS (PhD preferred) in electrical engineering required.  

• 8+ years of NAND design relevant proven experience required with proficient knowledge of Nand Flash memory read, program and erase algorithms 

• A very high level of self-motivation and proactivity. 

• Proficiency in analog/mixed signal circuit design (page buffers, block selectors, Xdecoder, Ydecoder, bias table and waveforms, PDNs, level shifters, IO buffers, RTL, Verilog) 

• Proficient fundamentals in semiconductor and device physics and analog/mixed-signal circuit design. An understanding of semiconductor reliability issues including CHC, NBTI, stress, and snapback, as well as Electromigration (EM) and IR analysis. 

• Proficient circuit debugging and problem-solving skills. 

• Proficiency in circuit verification and optimization, layout planning, parasitic extractions of the circuits, experience guiding layout. 

• Proficient in analog and digital simulators such as HSPICE, Fast SPICE, and Verilog 

• Proficient coding skills in Python (plus Bash/Tcl a bonus), and proficient working with structured data (CSV/JSON/SQLite) and version control. 

• Proficient with Cadence design, LVS/DRC tools and UNIX. 

• Excellent teamwork attitude. Good verbal communication skills (English) and ability to convey sophisticated technical concepts in verbal and written form.